NTD4815NH
TYPICAL PERFORMANCE CURVES
80
70
60
50
40
10 V
8V
6V
T J = 25 ° C
5V
4.5 V
60
50
40
30
V DS ≥ 10 V
30
20
10
0
0
2
4
6
8
4.2 V
4V
3.8 V
3.5 V
3.2 V
10
20
10
0
0
1
T J = 125 ° C
T J = 25 ° C
2 3
T J = --55 ° C
4
5
6
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.04
0.03
I D = 30 A
T J = 25 ° C
0.05
0.04
0.03
T J = 25 ° C
V GS = 4.5 V
0.02
0.02
0.01
0.01
V GS = 11.5 V
0
2
3
4
5
6
7
8
9
10
11
12
0
10
20
30
40
50
60
70
80
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
I D = 30 A
V GS = 10 V
10,000
V GS = 0 V
1.4
1.2
1.0
0.8
1000
T J = 150 ° C
T J = 100 ° C
0.6
--50 --25
0
25
50
75
100
125
150
175
100
0
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On--Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
相关PDF资料
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相关代理商/技术参数
NTD4815NT4G 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK
NTD4854N-1G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854N-35G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854NT4G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854NT4H 制造商:ON Semiconductor 功能描述:
NTD4855N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK
NTD4855N-1G 功能描述:MOSFET NFET 25V 98A 0.0033R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube